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面向的Ga2O3功率器件應用：封裝、魯棒性和多維器件Ga2O3Power Device Toward Application: Packaging, Robustness, and Multidimensional Devices張宇昊弗吉尼亞理工大學電力電子中心副教授ZHAGN YuhaoAssociate Professor of Center for Power Electronics Systems at Virginia Tech

基于液態(tài)金屬打印和飛秒激光照射的高性能原子薄Ga2O3氣體傳感器High-Performance atomically thin Ga2O3Gas Sensors via Liquid Metal Printing and Femtosecond Laser Irradiation徐承龍皇家墨爾本大學微納研究院研究員XU ChenglongProfessor of Micro Nano Research Facility, STEM College, RMIT University

基于表面電位的-Ga2O3功率MOSFET緊湊模型A Surface Potential Based Compact Model for -Ga2O3 Power MOSFETs周凱中國科學技術(shù)大學ZHOU KaiChina University of Science and Technology

Ultrawide Bandgap Ga2O3 Technologies - Benefits of Heterogeneous IntegrationMartin KUBALL英國布里斯托大學新興技術(shù)系主任、教授Martin KUBALLRoyal Academy of Engineering Chair in Emerging Technologies at the University of Bristol, UK

橫向和縱向-Ga2O3功率MOSFET的十年進展A Decade of Advances in Lateral and Vertical -Ga2O3 Power MOSFETs黃文海香港科技大學副教授Man Hoi WONGAssociate Professor of The Hong Kong University of Science and Technology

-Ga2O3單晶的體晶生長與性能Bulk crystal growth and properties of?-Ga2O3Single Crystal穆文祥山東大學副教授MU WenxiangAssociate Professor of Shandong University

利用高Al組分-(AlGa)2O3緩沖層在藍寶石襯底上優(yōu)化生長高質(zhì)量-Ga2O3厚膜Growth of high quality - Ga2O3 thick film on sapphire by using high Al content - (AlGa)2O3 buffer layer張赫之大連理工大學副教授ZHANG HezhiAssociate professor of Dalian University of Technology

NiO/Ga2O3異質(zhì)結(jié)二極管中深能級陷阱和載流子輸運機制Correlation of deep-level traps and carrier transport mechanisms in NiO/Ga2O3 heterojunction diodes汪正鵬南京大學Zhengpeng WangNanjing University

MgO（100）上生長柱狀納米晶b-Ga2O3外延薄膜及其高靈敏度日盲探測器研究Columnar-nanodomained epitaxial b-Ga2O3 thin films on MgO(100) for solar-blind photodetectors with exceedingly high sensitivity何云斌湖北大學教授HE YunbinProfessor of Hubei University

Ga2O3光電二極管的可控制備及應用Controllable Fabrication and Application of Ga2O3 Photodiodes盧紅亮復旦大學微電子學院教授LU HongliangProfessor of Fudan University

新型寬禁帶壓電半導體材料-Ga2O3及其在射頻諧振器中的應用-Ga2O3: an Emerging Wide Bandgap Piezoelectric Semiconductor for Application in Radio Frequency Resonators王鋼中山大學佛山研究院院長，中山大學半導體照明材料及器件國家地方聯(lián)合工程實驗室主任、教授WANG GangProfessor and Dean of Foshan Institute of Sun Yat-Sen University; Director of the National-Local Joint Engineering Laboratory of Semiconductor

基于HVPE-Ga2O3氮化的GaN襯底技術(shù)The preparation of GaN based on the nitridation of HVPE-Ga2O3 films修向前南京大學教授XIU Xiangqian-Professor of Nanjing university

中國科學院微電子研究所研究員龍世兵分享了基于(100) -Ga2O3 單晶的肖特基二極管和MOS電容的研究成果。基于型氧化鎵所生產(chǎn)的一些器件在能源使用中發(fā)揮著重要的作用。能源使用的安全性是一個重要問題，在自然能源不斷減少，價格不斷上升的背景下，我們需要找到一個更加有效的方式來利用能源。當前在高電壓應用領(lǐng)域，包括高鐵和智能電網(wǎng)等，硅仍然是主導材料，但有一定局限性，比如禁帶比較窄等。與寬禁帶材料相比，有弱勢的地方。