雙閾值耦合AlGaN/GaN HEMT中用于優(yōu)化Ka波段高電場線性度的多指漏極板研究Investigation of multi-fingers drain field plate in dual-threshold coupling AlGaN/GaN HEMTs for optimizing linearity at high electrical field in Ka-bands王鵬飛西安電子科技大學Wang PengfeiXidian University
無等離子體損傷GaN HEMT極化隔離的設計與優(yōu)化Design and optimization of polarization isolation toward plasma-damage-free GaN HEMT戴貽鈞中國科學院寧波材料技術與工程研究所DAI YiyunNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences
基于能帶工程與機器學習的Micro- LED 性能優(yōu)化Performance optimization based on band engineering and machine learning for microLEDs劉志遠 沙特阿卜杜拉國王科技大學，先進半導體實驗室LIU Zhiyuan Advanced semiconductor laboratory, King Abdullah University of ScienceTechnology
利用高Al組分-(AlGa)2O3緩沖層在藍寶石襯底上優(yōu)化生長高質量-Ga2O3厚膜Growth of high quality - Ga2O3 thick film on sapphire by using high Al content - (AlGa)2O3 buffer layer張赫之大連理工大學副教授ZHANG HezhiAssociate professor of Dalian University of Technology
