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基于大失配外延的氮化物第三代半導(dǎo)體材料與器件Nitride Semiconductor Materials and Devices Based on Large Mismatch Epitaxy沈波北京大學(xué)理學(xué)部副主任、特聘教授SHEN Bo Deputy Deanand Distinguished Professorof Facultyof Science, Peking University

氮化鋁單晶材料研究進展與應(yīng)用展望Research Progress and Application Prospect of AlN Single Crystal Materials程紅娟中國電子科技集團第四十六所新材料研發(fā)中心副主任CHENG HongjuanDeputy Director of New Materials Research and Development Center of CETC 46THInstitute

SiC功率器件制造工藝特點與核心裝備創(chuàng)新進展Manufacturing process characteristics and key equipment development of SiC power devices鞏小亮中國電子科技集團公司第四十八研究所 半導(dǎo)體裝備研究部副主任GONGXiaoliang Deputy director of Semiconductor equipment research department, the 48th Research Institute of China Electronics Technology Group Corporation