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  • 西安電子科技大學(xué)副校
    高功率寬禁帶半導(dǎo)體射頻器件研究進(jìn)展Research Progress of High Power Wide Band-gap Semiconductor RF Devices張進(jìn)成西安電子科技大學(xué)副校長(zhǎng)、教授ZHANG JinchengVice PresidentProfessor of Xidian University
    324000
    IFWS2025-01-09 15:50
  • 日本理化研究所平山量
    用于病毒滅活的藍(lán)寶石生長(zhǎng)230nm遠(yuǎn)紫外光功率模組的開(kāi)發(fā)研究Development of 230 nm Far-UVC LED Power Module Grown on c-Sapphire for Human Harmless Virus Inactivation平山秀樹(shù)日本理化研究所平山量子光素子研究室主任Hideki HIRAYAMAProfessor ofRIkagaku KENkyusho Institute of Physical and Chemical Research(RIKEN),Japan
    222600
    SSLCHINA2025-01-09 15:40
  • 材料科學(xué)姑蘇實(shí)驗(yàn)室研
    基于納米壓印全生態(tài)產(chǎn)業(yè)平臺(tái)的微納光學(xué)器件制造Manufacturing of Micro and Nano Optical Devices Based on Nanoimprint Eco-industrial Platform羅剛材料科學(xué)姑蘇實(shí)驗(yàn)室研究員、蘇州新維度微納科技有限公司創(chuàng)始人LUO GangProfessor of Gusu Lab, Founderof NDnano
    55700
    SSLCHINA2025-01-09 15:17
  • 山東大學(xué)教授、南砂晶
    碳化硅單晶缺陷研究及產(chǎn)業(yè)化進(jìn)展Research and Industrialization Progress of SiC Single Crystal Defects陳秀芳山東大學(xué)教授、南砂晶圓董事CHEN XiufangProfessor of Shandong University, Board Director of Guangzhou Summit Crystal Semiconductor Co.,Ltd
    55500
    IFWS2025-01-09 15:03
  • 蘇州大學(xué)教授董建飛:
    紅到紅外波段的三種光療在減少由受損線(xiàn)粒體誘導(dǎo)的氧化應(yīng)激方面的效果研究Efficacy of Three red-NIR Wavelengths in Reducing Oxidative Stress Induced by Impaired Mitochondrial Functions董建飛蘇州大學(xué)教授DONG JianfeiProfessor of Suzhou University
    55500
    SSLCHINA2025-01-09 14:48
  • 中科院長(zhǎng)春光機(jī)所研究
    Micro-led研究進(jìn)展及在光醫(yī)療領(lǐng)域的應(yīng)用展望The Research Progress of Micro-led and its Application Prospect in the Field of Optical Medicine呂金光中國(guó)科學(xué)院長(zhǎng)春光學(xué)精密機(jī)械與物理研究所研究員LV JinguangProfessorof Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences
    55600
    SSLCHINA2025-01-09 14:47
  • 崔錦江研究員：光學(xué)技
    光學(xué)技術(shù)糖足微循環(huán)監(jiān)測(cè)與干預(yù)應(yīng)用研究Application of Optical Technology in Monitoring and Intervention of Glucose Microcirculation崔錦江中國(guó)科學(xué)院蘇州生物醫(yī)學(xué)工程技術(shù)研究所康復(fù)與治療研究室主任、研究員CUI JinjiangDirector and Professor Rehabilitation and Treatment Laboratory, Suzhou Institute of Biomedical Engineering and Technology, Chinese Academy of Sciences
    55500
    SSLCHINA2025-01-09 14:44
  • 西安電子科技大學(xué)教授
    AlN基高壓高頻功率器件研究進(jìn)展及挑戰(zhàn)Research Progress and Application Prospect ofAlNSingle Crystal Materials周弘西安電子科技大學(xué)教授ZHOUHongProfessor at Xidian University
    55300
    IFWS2025-01-09 14:43
  • 中科重儀半導(dǎo)體聯(lián)合創(chuàng)
    GaN基光電材料外延與MOCVD反應(yīng)腔結(jié)構(gòu)關(guān)聯(lián)性研究Research on the Correlation Between GaN-based Optoelectronic Material Epitaxy and MOCVD Reactor Chamber Structure姚威振中國(guó)科學(xué)院半導(dǎo)體研究所副研究員、中科重儀半導(dǎo)體聯(lián)合創(chuàng)始人YAO WeizhenAssociate Professor of Institute of Semiconductors, Chinese Academy of Sciences, Co-founder of CASInstruments Semiconductor Co., Ltd.
    21200
    IFWS2025-01-09 14:42
  • 中科院蘇州納米所研究
    硅襯底GaN基光電材料外延生長(zhǎng)Epitaxial Growth of GaN Based Photoelectric Materials on Silicon Substrate孫錢(qián)中國(guó)科學(xué)院蘇州納米技術(shù)與納米仿生研究所研究員SUN QianProfessorof Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences
    55400
    IFWS2025-01-09 14:41
  • 中電科第十三所高級(jí)工
    6英寸復(fù)合襯底上厚GaN外延生長(zhǎng)研究Growth of Thick GaN Epilayers on 150mm Engineered Substrate韓穎中國(guó)電子科技集團(tuán)第十三所高級(jí)工程師HAN YingSenior Engineer of Hebei Semiconductor Research Institute
    32400
    IFWS2025-01-09 14:27
  • 日本NTT基礎(chǔ)研究實(shí)驗(yàn)
    氮化鋁基半導(dǎo)體材料及器件的最新進(jìn)展Recent Progress on AlN-based Semiconductor Materials and Devices谷保芳孝日本NTT基礎(chǔ)研究實(shí)驗(yàn)室負(fù)責(zé)人、資深杰出研究員Taniyasu YOSHITAKAGroup leader and Senior Distinguished Researcher of NTT Basic Research Laboratories, NTT Corporation
    45600
    IFWS2025-01-09 14:25
  • 中國(guó)科學(xué)院蘇州納米所
    氨熱法氮化鎵單晶生長(zhǎng)研究進(jìn)展及面臨的挑戰(zhàn)Progress and Challenges in Bulk GaN Crystal Growth by Ammonothermal Method任國(guó)強(qiáng)中國(guó)科學(xué)院蘇州納米技術(shù)與納米仿生研究所、研究員REN GuoqiangProfessorof Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences
    44300
    IFWS2025-01-09 14:24
  • 中電科四十六所新材料
    氮化鋁單晶材料研究進(jìn)展與應(yīng)用展望Research Progress and Application Prospect of AlN Single Crystal Materials程紅娟中國(guó)電子科技集團(tuán)第四十六所新材料研發(fā)中心副主任CHENG HongjuanDeputy Director of New Materials Research and Development Center of CETC 46THInstitute
    55300
    IFWS2025-01-09 14:21
  • 中車(chē)科學(xué)家劉國(guó)友：軌
    軌道交通SiC功率器件研究與應(yīng)用進(jìn)展劉國(guó)友株洲中車(chē)時(shí)代電氣股份有限公司中車(chē)科學(xué)家、功率半導(dǎo)體與集成技術(shù)全國(guó)重點(diǎn)實(shí)驗(yàn)室副主任
    55600
    IFWS2025-01-09 14:12
  • 艾姆希半導(dǎo)體銷(xiāo)售總監(jiān)
    第四代半導(dǎo)體材料平坦化研究進(jìn)展Research Progress on Planarization of Fourth Generation Semiconductor Materials趙志強(qiáng)北京艾姆希半導(dǎo)體科技有限公司銷(xiāo)售總監(jiān)ZHAO ZhiqiangSales Director of MCF Technologies Ltd.
    55400
    IFWS2025-01-09 14:07
  • 深圳平湖實(shí)驗(yàn)室第四代
    超寬禁帶半導(dǎo)體氧化鎵和氮化鋁特性研究Research on the Characteristics of Ultra-wide Bandgap Semiconductor GaO and AlN張道華深圳平湖實(shí)驗(yàn)室第四代半導(dǎo)體首席科學(xué)家、新加坡工程院院士ZHANG DaohuaChief Scientist of Fourth-generation Semiconductors of Shenzhen Pinghu Laboratory, Academician the Academy of Engineering, Singapore
    55900
    IFWS2025-01-09 14:02
  • 皇家墨爾本大學(xué)微納研
    基于液態(tài)金屬打印和飛秒激光照射的高性能原子薄Ga2O3氣體傳感器High-Performance atomically thin Ga2O3Gas Sensors via Liquid Metal Printing and Femtosecond Laser Irradiation徐承龍皇家墨爾本大學(xué)微納研究院研究員XU ChenglongProfessor of Micro Nano Research Facility, STEM College, RMIT University
    44300
    IFWS2025-01-09 13:57
  • 鎵和半導(dǎo)體李山:氧化
    氧化鎵PECVD外延生長(zhǎng)及光電信息感知器件研究Research on PECVD Epitaxial Growth of Gallium Oxide and the Photoelectric Information Sensing Devices李山南京郵電大學(xué)副教授、蘇州鎵和半導(dǎo)體研發(fā)總監(jiān)LI ShanAssociate Professor, Nanjing University of Posts and Telecommunications, RD director of Suzhou GAO Semiconductor Co. Ltd.
    55300
    IFWS2025-01-09 13:53
  • 西安電子科技大學(xué)王鵬
    雙閾值耦合AlGaN/GaN HEMT中用于優(yōu)化Ka波段高電場(chǎng)線(xiàn)性度的多指漏極板研究Investigation of multi-fingers drain field plate in dual-threshold coupling AlGaN/GaN HEMTs for optimizing linearity at high electrical field in Ka-bands王鵬飛西安電子科技大學(xué)Wang PengfeiXidian University
    95700
    guansheng2023-05-22 15:22
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