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中科重儀半導(dǎo)體聯(lián)合創(chuàng)
2120
中科重儀半導(dǎo)體聯(lián)合創(chuàng)
GaN基光電材料外延與MOCVD反應(yīng)腔結(jié)構(gòu)關(guān)聯(lián)性研究Research on the Correlation Between GaN-based Optoelectronic Material Epitaxy and MOCVD Reactor Chamber Structure姚威振中國科學(xué)院半導(dǎo)體研究所副研究員、中科重儀半導(dǎo)體聯(lián)合創(chuàng)始人YAO WeizhenAssociate Professor of Institute of Semiconductors, Chinese Academy of Sciences, Co-founder of CASInstruments Semiconductor Co., Ltd.
21200
IFWS2025-01-09 14:42
中科院蘇州納米所研究
5540
中科院蘇州納米所研究
硅襯底GaN基光電材料外延生長Epitaxial Growth of GaN Based Photoelectric Materials on Silicon Substrate孫錢中國科學(xué)院蘇州納米技術(shù)與納米仿生研究所研究員SUN QianProfessorof Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences
55400
IFWS2025-01-09 14:41
中電科第十三所高級工
3240
中電科第十三所高級工
6英寸復(fù)合襯底上厚GaN外延生長研究Growth of Thick GaN Epilayers on 150mm Engineered Substrate韓穎中國電子科技集團第十三所高級工程師HAN YingSenior Engineer of Hebei Semiconductor Research Institute
32400
IFWS2025-01-09 14:27
西安電子科技大學(xué)王鵬
9570
西安電子科技大學(xué)王鵬
雙閾值耦合AlGaN/GaN HEMT中用于優(yōu)化Ka波段高電場線性度的多指漏極板研究Investigation of multi-fingers drain field plate in dual-threshold coupling AlGaN/GaN HEMTs for optimizing linearity at high electrical field in Ka-bands王鵬飛西安電子科技大學(xué)Wang PengfeiXidian University
95700
guansheng2023-05-22 15:22
山東大學(xué)新一代半導(dǎo)體
10950
山東大學(xué)新一代半導(dǎo)體
電流/功率截止頻率為135/310 GHz的高性能硅基InAlN/GaN HEMTsHigh-Performance InAlN/GaN HEMTs on Silicon Substrate with fT/fmax of 135/310 GHz 崔鵬山東大學(xué)新一代半導(dǎo)體材料研究院研究員CUIPengResearch Fellow of the Institute of Novel Semiconductor of Shandong University
109500
guansheng2023-05-22 15:20
復(fù)旦大學(xué)教授黃偉：寬
9210
復(fù)旦大學(xué)教授黃偉：寬
寬帶GaN毫米波新器件研究Research on Broadband GaN Millimeter Wave Devices黃偉復(fù)旦大學(xué)教授HUANG WeiProfessor of Fudan University
92100
guansheng2023-05-22 15:16
澳大利亞麥考瑞大學(xué)教
7810
澳大利亞麥考瑞大學(xué)教
Scalable nonlinear RF modeling of GaN HEMTs with industry standard ASM-HEMT compact modelSourabh KHANDELWAL澳大利亞麥考瑞大學(xué)教授Sourabh KHANDELWALProfessor of Macquarie University, Australia
78100
guansheng2023-05-22 15:14
西交利物浦大學(xué)朱昱豪
7180
西交利物浦大學(xué)朱昱豪
35-5V單片集成GaN基DC-DC浮動降壓轉(zhuǎn)換器A 35-5 V Monolithic integrated GaN-based DC-DC Floating Buck Converter朱昱豪西交利物浦大學(xué)ZHU YuhaoXi'an Jiaotong-Liverpool University
71800
guansheng2023-05-22 15:14
中科院寧波材料所戴貽
6880
中科院寧波材料所戴貽
無等離子體損傷GaN HEMT極化隔離的設(shè)計與優(yōu)化Design and optimization of polarization isolation toward plasma-damage-free GaN HEMT戴貽鈞中國科學(xué)院寧波材料技術(shù)與工程研究所DAI YiyunNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences
68800
guansheng2023-05-22 15:13
中科院蘇州納米所助理
7250
中科院蘇州納米所助理
功率HEMT的p-GaN柵極可靠性及其加固方法GaN Gate Reliability and Its Reinforcement Techniques in Power HEMTs鐘耀宗中國科學(xué)院蘇州納米技術(shù)與納米仿生研究所助理研究員ZHONG YaozongAssistant Professor of Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences
72500
guansheng2023-05-22 15:12
中國科學(xué)院北京納米能
10080
中國科學(xué)院北京納米能
AlGaN/GaN HEMT能帶工程和界面調(diào)制AlGaN/GaN HEMT energy band engineering and interface modulation胡衛(wèi)國中國科學(xué)院北京納米能源與系統(tǒng)研究所研究員HU WeiguoProfessor of Beijing Institute of Nanoenergy and Systems, Chinese Academy of Sciences
100800
guansheng2023-05-22 15:02
電子科技大學(xué)博士陳匡
7990
電子科技大學(xué)博士陳匡
p-GaN Gate HEMT器件閾值穩(wěn)定性及其機理Study of the Physics of Vth Instability of p-GaN Gate HEMT陳匡黎電子科技大學(xué)博士ZHOU QiProfessor of University of Electronic Science and Technology of China
79900
guansheng2023-05-22 15:02
加拿大滑鐵盧大學(xué)副教
9130
加拿大滑鐵盧大學(xué)副教
RecentProgressoftheMITVirtual-SourceGaNHEMT(MVSG)CompactModelLan WEI加拿大滑鐵盧大學(xué)副教授Lan WEIAssociate Professor of University of Waterloo, Canada
91300
guansheng2023-05-22 14:59
南方科技大學(xué)深港微電
10590
南方科技大學(xué)深港微電
Si基GaN器件及系統(tǒng)研究與產(chǎn)業(yè)前景Research of GaN-on-Si devices and the related systems于洪宇南方科技大學(xué)深港微電子學(xué)院院長、教授YU HongyuDeanProfessor of School of Microelectronics at Southern University of Science and Technology
105900
guansheng2023-05-22 14:57
瑞士洛桑聯(lián)邦理工學(xué)院
12390
瑞士洛桑聯(lián)邦理工學(xué)院
New technologies for efficient and integrated GaN power devicesElison MATIOLI瑞士洛桑聯(lián)邦理工學(xué)院教授Elison MATIOLIProfessor of ?cole Polytechnique Fdrale de Lausanne, Swiss
123900
guansheng2023-05-22 14:56
中南大學(xué)黃錦鵬：GaN-
3630
中南大學(xué)黃錦鵬：GaN-
GaN-based Resonant Cavity Micro-LEDs for AR Application黃錦鵬中南大學(xué)HUANG Jinpeng Central South University
36300
guansheng2023-05-22 14:19
南京大學(xué)余俊馳：高透
6770
南京大學(xué)余俊馳：高透
高透明度GaN基Micro-LED顯示器High Transparency GaN-based Micro-LED Display余俊馳南京大學(xué)電子科學(xué)與工程學(xué)院YU JunchiSchool of Electronic Science and Engineering, Nanjing University
67700
guansheng2023-05-22 14:18
廈門大學(xué)副教授盧衛(wèi)芳
7380
廈門大學(xué)副教授盧衛(wèi)芳
Micro-LED用GaN納米線上生長的非極性GaInN/GaN多量子殼的系統(tǒng)研究Systematic investigation of nonpolar GaInN/GaN multiple-quantum-shells grown on GaN nanowires for Micro-LEDs盧衛(wèi)芳廈門大學(xué)物理科學(xué)與技術(shù)學(xué)院物理學(xué)系，副教授LU WeifangAssociate Professor, School of Physical Science and Technology, Xiamen University
73800
guansheng2023-05-22 14:12
南京大學(xué)蘇州校區(qū)集成
8380
南京大學(xué)蘇州校區(qū)集成
InGaN基紅色發(fā)光二極管：從傳統(tǒng)LED到Micro-LEDInGaN-based red light-emitting diodes: from traditional to micro-LEDs莊喆南京大學(xué)蘇州校區(qū)集成電路學(xué)院助理教授ZHUANG ZheAssistant Professor for School of Integrated Circuits in Nanjing University Suzhou Campus
83800
guansheng2023-05-22 14:11
復(fù)旦大學(xué)副教授田朋飛
9320
復(fù)旦大學(xué)副教授田朋飛
基于InGaN基硅襯底Micro-LED的多色集成轉(zhuǎn)移印刷技術(shù)Transfer printing technology based on InGaN-based silicon substrate micro-LEDs for multicolor integration田朋飛復(fù)旦大學(xué)副教授TIAN Pengfei Associate Professor of Fudan University
93200
guansheng2023-05-22 14:07

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