電流/功率截止頻率為135/310 GHz的高性能硅基InAlN/GaN HEMTsHigh-Performance InAlN/GaN HEMTs on Silicon Substrate with fT/fmax of 135/310 GHz 崔鵬山東大學新一代半導體材料研究院研究員CUIPengResearch Fellow of the Institute of Novel Semiconductor of Shandong University
面向功率器件的高性能AlN陶瓷基板High Performance AlN Ceramic Substrate for Power Devices梁超江蘇博睿光電股份有限公司副總經理LIANG ChaoDeputy General Manager of Jiangsu Bree Optronics Co., Ltd
基于超短周期超晶格AlN/GaN的深紫外短波光發(fā)射調控Deep-ultraviolet light extraction towards shorter wavelength based on ultrashort-period AlN/GaN suplerlattices高娜廈門大學副教授GAO NaAssociate Professor of Xiamen University
Fabrication of 265 nm AlGaN-LEDs on Face-to-face annealed AlN/sapphire template三宅秀人日本三重大學教授Hideto MIYAKEProfessor of Graduate School of Engineering, Mie University
利用AlN傳導層在GaN襯底上外延生長金剛石薄膜及其熱傳輸特性Thermal dissipation from GaN to diamond with AlN conduction layer桑立雯日本國立物質材料研究所獨立研究員SANG LiwenIndependent Scientist of National Institute for Materials Science (NIMS), Japan
平片藍寶石襯底上高質量AlN材料MOCVD外延生長High quality AlN growth on flat sapphire at relative low temperature by MOCVD趙德剛中國科學院半導體所研究員ZHAO DegangProfesor of Institute of Semiconductors, CAS
